Surface area and Schottky barrier height engineering for contact trench epitaxy

US10643894B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• GlobalFoundries Inc. · KY

Inventors

• Jody A. Fronheiser · Delmar, US
• Shogo Mochizuki · Clifton Park, US
• Hiroaki Niimi · Cohoes, US
• Balasubramanian Pranatharthiharan · Watervliet, US
• Mark V. Raymond · Austin, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: May 17, 2017
• Grant date: May 5, 2020
• Expiry date: Sep 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.