Self-aligned contact for trench power MOSFET
US10644118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.