Compositions and methods for etching silicon nitride-containing substrates
US10651045B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Sep 6, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Sep 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.