Patent · US Active

LDMOS transistor

US10665531B2 · kind B2 · utility

0Cited by

17References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE

Key dates

Filing date	Feb 11, 2019
Grant date	May 26, 2020
Priority date	—
Expiry date	Feb 11, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a lateral transistor arranged in the front surface of the semiconductor substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines side walls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source of the lateral transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.