Patent · US Active

LDMOS transistor and method

US10672686B2 · kind B2 · utility

0Cited by

17References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE

Key dates

Filing date	Aug 8, 2019
Grant date	Jun 2, 2020
Priority date	—
Expiry date	Aug 8, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a conductive through substrate via includes forming an opening in a first surface of a semiconductor substrate comprising a LDMOS transistor structure in the first surface, forming a first conductive layer in a first portion of the opening in the semiconductor substrate using first deposition parameters such that the first conductive layer fills the opening in the first portion, and forming a second conductive layer on the first conductive layer in a second portion of the opening using second deposition parameters such that the second conductive layer bounds a gap in the second portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.