Metrology using overlay and yield critical patterns

US10685165B2 · kind B2 · utility

Assignee

• KLA-TENCOR CORPORATION · US

Inventors

• Daniel Kandel · Aseret, IL
• Mark D. Smith · Austin, US
• Mark Wagner · Rehovot, IL
• Eran Amit · Haifa, IL
• Myungjun Lee · Yongin-si, KR

Key dates

• Filing date: Mar 28, 2016
• Grant date: Jun 16, 2020
• Expiry date: Jun 15, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P80/30
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.