Method of forming semiconductor material in trenches having different widths, and related structures

US10714376B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Chih-Chiang Chang · Tucson, US
• Haifeng Sheng · Rexford, US
• Jiehui Shu · Clifton Park, US
• Haigou Huang · Rexford, US
• Pei Liu · Clifton Park, US
• Jinping Liu · Ballston Lake, US
• Haiting Wang · Clifton Park, US
• Daniel Jaeger · Saratoga Springs, US

Key dates

• Filing date: Jun 25, 2018
• Grant date: Jul 14, 2020
• Expiry date: Jun 29, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to methods for forming fill materials in trenches having different widths and related structures. A method may include: forming a first fill material in a first and second trench where the second trench has a greater width than the first trench; removing a portion of the first fill material from each trench and forming a second fill material over the first fill material; removing a portion of the first and second fill material within the second trench; and forming a third fill material in the second trench. The structure may include a first fill material in trenches having different widths wherein the upper surfaces of the first fill material in each trench are substantially co-planar. The structure may also include a second fill material on the first fill material in each trench, the second fill material having a substantially equal thickness in each trench.