Gas delivery system for high pressure processing chamber
US10720341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Nov 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.