Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice

US10727049B2 · kind B2 · utility

Assignee

• ATOMERA INCORPORATED · US

Inventors

• Keith Doran Weeks · Chandler, US
• Nyles Wynn Cody · Tempe, US
• Marek Hytha · Brookline, US
• Robert J. Mears · Wellesley, US
• Robert John Stephenson · Duxford, GB

Key dates

• Filing date: Mar 9, 2018
• Grant date: Jul 28, 2020
• Expiry date: Oct 20, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.