Platform and method of operating for integrated end-to-end self-aligned multi-patterning process
US10727057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2019 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Mar 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting film-forming modules, etching modules, and transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment. Broadly, using selective/conformal deposition, etching, or implanting techniques to form a sidewall spacer pattern on a common manufacturing platform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.