Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10727073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2017 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jun 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for etching semiconductor material on substrates using atomic layer etching by chemisorption, by deposition, or by both chemisorption and deposition mechanisms in combination with oxide passivation are described herein. Methods involving atomic layer etching using a chemisorption mechanism involve exposing the semiconductor material to chlorine to chemisorb chlorine onto the substrate surface and exposing the modified surface to argon to remove the modified surface. Methods involving atomic layer etching using a deposition mechanism involve exposing the semiconductor material to a sulfur-containing gas and hydrogen to deposit and thereby modify the substrate surface and removing the modified surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.