Patent · US Active

Plasma parameters and skew characterization by high speed imaging

US10748797B2 · kind B2 · utility

1Cited by
7References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2018
Grant dateAug 18, 2020
Priority date
Expiry dateFeb 11, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.