Dry plasma etch method to pattern MRAM stack
US10749103B2 · kind B2 · utility
5Cited by
35References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatuses for etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Apparatuses are suitable for fabricating MRAM structures and may be used to integrate ALD and ALE processes without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.