Methods of increasing selectivity for selective etch processes
US10755947B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | May 1, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | May 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.