Structures, methods and applications for electrical pulse anneal processes

US10755949B2 · kind B2 · utility

Assignee

• Elpis Technologies Inc. · CA

Inventors

• Michel J. Abou-Khalil · South Burlington, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Jun 25, 2018
• Grant date: Aug 25, 2020
• Expiry date: Jun 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an cathode on a substrate and a anode on the substrate. The anode is in electrical contact with the cathode. The method further includes forming a device between the cathode and the anode. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.