Spin orbit torque MRAM and manufacture thereof
US10756259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The bottom-pinned spin-orbit torque (SOT) MRAM devices are fabricated to form high quality interfaces between layers including the spin-orbit torque (SOT) layer and the free layer of the magnetic tunnel junction (MTJ) by forming those layers under vacuum, without breaking vacuum in between formation of the layers. An encapsulation layer is used as an etch stop and to protect the free layer. The encapsulation layer is etched back prior to the deposition of a metal layer. The metal layer forms a plurality of metal lines that are electrically connected to two or more sides of the SOT layer and are electrically coupled to the SOT layer to transfer current through the SOT layer. The metal lines are not in contact with a top surface of the SOT layer which has a dielectric layer disposed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.