Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

US10777506B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Hille · Munich, DE
• Ravi Keshav Joshi · Klagenfurt, AT
• Michael Fugger · Wien, AT
• Oliver Humbel · Maria Elend, AT
• Thomas Laska · Birkenfeld, DE
• Matthias Müller · Kirchheim unter Teck, DE
• Roman Roth · Sattendorf, AT
• Carsten Schaeffer · Annenheim, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Holger Schulze · Villach, AT
• Juergen Steinbrenner · Zistersdorf, AT
• Frank Umbach · Munich, DE

Key dates

• Filing date: Sep 20, 2019
• Grant date: Sep 15, 2020
• Expiry date: Sep 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53238
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.