Directional deposition on patterned structures
US10825680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2018 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Apr 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/11474
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are methods and related apparatus that facilitate patterning by performing highly non-conformal (directional) deposition on patterned structures. The methods involve depositing films on a patterned structure, such as a hard mask. The deposition may be both substrate-selective such that the films have high etch selectivity with respect to an underlying material to be etched and pattern-selective such that the films are directionally deposited to replicate the pattern of the patterned structure. In some embodiments, the deposition is performed in the same chamber as a subsequent etch is performed. In some embodiments, the deposition may be performed in a separate chamber (e.g., a PECVD deposition chamber) that is connected to the etch chamber by a vacuum transfer chamber. The deposition may be performed prior to or at selected intermittences during at etch process. In some embodiments, the deposition involves multiple cycles of a deposition and treatment process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.