IGBT with dV/dt controllability

US10840362B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Philippou · Munich, DE
• Markus Bina · Sauerlach, DE
• Matteo Dainese · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Antonio Vellei · Villach, AT
• Caspar Leendertz · Munich, DE
• Christian Philipp Sandow · Haar, DE

Key dates

• Filing date: Oct 23, 2018
• Grant date: Nov 17, 2020
• Expiry date: Oct 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A power semiconductor device includes an active cell region with a drift region, and IGBT cells at least partially arranged within the active cell region. Each IGBT cell includes at least one trench extending into the drift region along a vertical direction, an edge termination region surrounding the active cell region, and a transition region arranged between the active cell region and the edge termination region. The transition region has a width along a lateral direction from the active cell region towards the edge termination region. At least some of the IGBT cells are arranged within, or, respectively, extend into the transition region. An electrically floating barrier region of each IGBT cell is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells. The electrically floating barrier region does not extend into the transition region.