Enhanced selective deposition process
US10892161B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Mar 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.