Dielectric isolated fin with improved fin profile
US10892364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Nov 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a fin structure that includes forming a plurality of fin structures from a bulk semiconductor substrate and forming a dielectric spacer on a sidewall of each fin structure in the plurality of fin structure. A semiconductor spacer is formed on a sidewall of the dielectric spacer. A dielectric fill is formed in the space between the adjacent fin structures. The semiconductor spacer and a portion of the fin structures that is present below a lower surface of the dielectric spacer are oxidized. Oxidizing a base portion of the fin structures produces a first strain and oxidizing the semiconductor spacer produces a second strain that is opposite the first strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.