Method and apparatus to correct for patterning process error
US10915689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Nov 3, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.