Modified dielectric fill between the contacts of field-effect transistors
US10916470B2 · kind B2 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures that include a field effect-transistor and methods of forming a structure that includes a field-effect transistor. A first field-effect transistor includes a first source/drain region, and a second field-effect transistor includes a second source/drain region. A first contact is arranged over the first source/drain region, and a second contact is arranged over the second source/drain region. A portion of a dielectric layer, which is composed of a low-k dielectric material, is laterally arranged between the first contact and the second contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.