Top buffer layer for magnetic tunnel junction application
US10923652B2 · kind B2 · utility
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5References
17Claims
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Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67766
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.