Methods for enhancing selectivity in SAM-based selective deposition

US10950433B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Chang Ke · Sunnyvale, US
• Michael S. Jackson · Sunnyvale, US
• Liqi Wu · San Jose, US
• Lei Zhou · Tianjin, CN
• Shuyi Zhang · Parsippany, US
• David Thompson · San Jose, US
• Paul F. Ma · Santa Clara, US
• Biao Liu · Beijing, CN
• Cheng Pan · San Jose, US

Key dates

• Filing date: Nov 16, 2018
• Grant date: Mar 16, 2021
• Expiry date: Nov 16, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.