Patent · US Active

High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability

US10971612B2 · kind B2 · utility

12Cited by

31References

21Claims

0Family size

Assignee

Cree, Inc. · US

Inventors

Kyle Bothe · Cary, US
Evan Jones · Durham, US
Dan Namishia · Wake Forest, US
Chris Hardiman · Morrisville, US
Fabian Radulescu · Chapel Hill, US
Terry Alcorn · Cary, US
Scott Sheppard · Chapel Hill, US
Bruce C. Schmukler · Morrisville, US

Key dates

Filing date	Aug 29, 2019
Grant date	Apr 6, 2021
Priority date	—
Expiry date	Aug 29, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/257
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.