Interconnect structure having fully aligned vias
US10978343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Aug 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure includes an interlayer dielectric (ILD) having a cavity extending therethrough along a first direction. A first electrically conductive strip is formed on a substrate and within the cavity. The first electrically conductive strip extends along the first direction and across an upper surface of the substrate. A second electrically conductive strip is on an upper surface of the ILD and extends along a second direction opposite the first direction. A fully aligned via (FAV) extends between the first and second electrically conductive strips such that all sides of the FAV are co-planar with opposing sides of the first electrically conductive strip and opposing sides of the second electrically conductive strip thereby providing a FAV that is fully aligned with the first electrically conductive strip and the second electrically conductive strip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.