Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer

US10978418B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Joachim Mahler · Regensburg, DE
• Michael Bauer · Nittendorf, DE
• Jochen Dangelmaier · Beratzhausen, DE
• Reimund Engl · Munich, DE
• Johann Gatterbauer · Parsberg, DE
• Frank Hille · Munich, DE
• Michael Huettinger · Munich, DE
• Werner Kanert · Holzkirchen, DE
• Heinrich Koerner · Bruckmühl, DE
• Brigitte Ruehle · Holzkirchen, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Sep 17, 2019
• Grant date: Apr 13, 2021
• Expiry date: Sep 17, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.