Transistor comprising a channel placed under shear strain and fabrication process

US10978594B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Emmanuel Augendre · Montbonnot-Saint-Martin, FR
• Maxime Argoud · Grenoble, FR
• Sylvain Maitrejean · Paris, FR
• Pierre Morin · Albany, US
• Raluca Tiron · Saint-Égrève, FR

Key dates

• Filing date: Dec 22, 2015
• Grant date: Apr 13, 2021
• Expiry date: Dec 22, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The invention relates to a field-effect transistor including an active zone including a source, a channel, a drain and a control gate, which is positioned level with said channel, allowing a current to flow through said channel between the source and drain along an x-axis, said channel including: a first edge of separation with said source; and a second edge of separation with said drain; said channel being compressively or tensilely strained, characterized in that said channel includes a localized perforation or a set of localized perforations along at least said first and/or second edge of said channel so as to also create at least one shear strain in said channel. The invention also relates to a process for fabricating said transistor.