Cobalt filling of interconnects in microelectronics

US10995417B2 · kind B2 · utility

Assignee

• MacDermid Enthone Inc. · US

Inventors

• John Commander · Old Saybrook, US
• Vincent Paneccasio, Jr. · Madison, US
• Eric Rouya · Oakland, US
• Kyle Whitten · Hamden, US
• Shaopeng Sun · Orange, US
• Jianwen Han · Danbury, US

Key dates

• Filing date: Jun 30, 2016
• Grant date: May 4, 2021
• Expiry date: Oct 22, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C25D5/18
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.