Tuning work function of p-metal work function films through vapor deposition
US11018009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Jun 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.