Cobalt filling of interconnects

US11035048B2 · kind B2 · utility

Assignee

• MacDermid Enthone Inc. · US

Inventors

• John Commander · Old Saybrook, US
• Kyle Whitten · Hamden, US
• Vincent Paneccasio, Jr. · Madison, US
• Shaopeng Sun · Orange, US
• Eric Yakobson · Waterbury, US
• Jianwen Han · Danbury, US
• Elie H. Najjar · Norwood, US

Key dates

• Filing date: Jul 5, 2017
• Grant date: Jun 15, 2021
• Expiry date: Jul 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76879
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.