Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
US11037908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded assembly includes a first semiconductor die including a first substrate, first semiconductor devices located on the first substrate, first dielectric material layers located on the first semiconductor devices and embedding first metal interconnect structures, and first through-substrate via structures extending through the first substrate and contacting a respective first metal interconnect structure. Each of the first through-substrate via structures laterally surrounds a respective core cavity that contains a void or a dielectric fill material portion. The bonded assembly includes a second semiconductor die attached to the first semiconductor die, and including a second substrate, second semiconductor devices located on the second substrate, second dielectric material layers located on the second semiconductor devices and embedding second metal interconnect structures, and bonding pad structures electrically connected to a respective one of the second metal interconnect structures and bonded to a respective first through-substrate via structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.