Middle of the line self-aligned direct pattern contacts
US11043418B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.