Stepped field plates with proximity to conduction channel and related fabrication methods
US11075271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Oct 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.