Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode

US11075334B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alexander Reznicek · Troy, US
• Ruilong Xie · Niskayuna, US
• Heng Wu · Guilderland, US
• Lan Yu · Beijing, CN

Key dates

• Filing date: Nov 22, 2019
• Grant date: Jul 27, 2021
• Expiry date: Jan 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A memory structure, and a method for forming the same, includes a spin-orbit-torque electrode within a dielectric layer located above a substrate. The spin-orbit-torque electrode including a first conductive material, and a spin-orbit torque via is directly above the spin-orbit-torque electrode that includes a second conductive material. A magnetic tunnel junction pillar is directly above the spin-orbit torque via, and the spin-orbit-torque via contacting a center of a bottom surface of the magnetic-tunnel-junction pillar. A third conductive material is positioned directly below the bottom surface of the magnetic tunnel junction pillar on opposite sides of the spin-orbit torque via and directly above the spin-orbit-torque electrode. The third conductive material, the spin-orbit torque electrode and the spin-orbit torque via form a bottom spin-orbit torque electrode of the magnetic tunnel junction pillar.