Top via with hybrid metallization

US11139201B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Koichi Motoyama · Clifton Park, US
• Nicholas Anthony Lanzillo · Wynantskill, US
• Christopher J. Penny · Saratoga Springs, US
• Somnath Ghosh · Cumming, US
• Robert R. Robison · Colchester, US
• Lawrence A. Clevenger · Saratoga Springs, US

Key dates

• Filing date: Nov 4, 2019
• Grant date: Oct 5, 2021
• Expiry date: Nov 4, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present invention are directed to fabrication methods and resulting structures for subtractively forming a top via using a hybrid metallization scheme. In a non-limiting embodiment of the invention, a surface of a conductive line is recessed below a topmost surface of a first liner layer. The first liner layer can be positioned between the conductive line and a dielectric layer. A top via layer is formed on the recessed surface of the conductive line and a hard mask is formed over a first portion of the top via layer. A second portion of the top via layer is removed. The remaining first portion of the top via layer defines the top via. The conductive line can include copper while the top via layers can include ruthenium or cobalt.