Methods for etching a structure for MRAM applications

US11145808B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jong Mun Kim · San Jose, US
• Minrui Yu · Madison, US
• Chando Park · San Diego, US
• Mang-Mang Ling · San Jose, US
• Jaesoo Ahn · San Jose, US
• Chentsau Chris Ying · Cupertino, US
• Srinivas D. Nemani · Sunnyvale, US
• Mahendra Pakala · San Jose, US
• Ellie Yieh · San Jose, US

Key dates

• Filing date: Nov 12, 2019
• Grant date: Oct 12, 2021
• Expiry date: Feb 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.