Processing of workpieces using hydrogen radicals and ozone gas
US11164727B2 · kind B2 · utility
0Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Jul 14, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Jul 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.