Methods and apparatus for producing low angle depositions

US11170982B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Anantha K. Subramani · San Jose, US
• Praburam Gopal Raja · Santa Clara, US
• Steven V. Sansoni · Livermore, US
• John C. Forster · San Francisco, US
• Philip Allan Kraus · San Jose, US
• Yang Guo · Nanhu, CN
• Prashanth Kothnur · San Jose, US
• Farzad Houshmand · Mountain View, US
• Bencherki Mebarki · Santa Clara, US
• John Mazzocco · San Jose, US
• Thomas Brezoczky · Los Gatos, US

Key dates

• Filing date: Aug 1, 2019
• Grant date: Nov 9, 2021
• Expiry date: Apr 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/033
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.