Three-dimensional memory devices and methods for forming the same

US11211397B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zhenyu Lu · Hubei, CN
• Jun Chen · Hubei, CN
• Jifeng Zhu · Hubei, CN
• Yushi Hu · 红钢城街道, CN
• Qian Tao · Singapore, SG
• Simon Shi-Ning Yang · Portland, US
• Steve Weiyi Yang · Hubei, CN

Key dates

• Filing date: Jul 27, 2018
• Grant date: Dec 28, 2021
• Expiry date: Jul 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/80895
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a NAND memory device includes a substrate, one or more peripheral devices on the substrate, a plurality of NAND strings above the peripheral devices, a single crystalline silicon layer above and in contact with the NAND strings, and interconnect layers formed between the peripheral devices and the NAND strings. In some embodiments, the NAND memory device includes a bonding interface at which an array interconnect layer contacts a peripheral interconnect layer.