Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates
US11217443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.