Conformal damage-free encapsulation of chalcogenide materials
US11239420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Aug 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.