Carbon containing hardmask removal process using sulfur containing process gas

US11264249B2 · kind B2 · utility

Assignees

• Mattson Technology, Inc. · US
• Beijing E-Town Semiconductor Technology Co., Ltd. · CN

Inventors

• Fen Dai · Nanhu, CN
• Tinghao Wang · Eden Prairie, US
• Oliver Jan · Fremont, US
• Moo-Hyun Kim · Seojong-myeon, KR
• Shawming Ma · Sunnyvale, US
• Zhongming Liu · Hefei, CN

Key dates

• Filing date: Dec 13, 2019
• Grant date: Mar 1, 2022
• Expiry date: Dec 13, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.