Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US11264560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ≥1, and resistance×area (RA) product is below 5 ohm-μm2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.