Spacer etching process

US11276560B2 · kind B2 · utility

Assignees

• Mattson Technology, Inc. · US
• Beijing E-Town Semiconductor Technology Co., Ltd. · CN

Inventors

• Tsai Wen Sung · Fremont, US
• Chun Yan · San Jose, US
• Michael X. Yang · Palo Alto, US

Key dates

• Filing date: Aug 25, 2020
• Grant date: Mar 15, 2022
• Expiry date: Aug 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.