Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
US11289487B2 · kind B2 · utility
1Cited by
16References
26Claims
0Family size
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Key dates
| Filing date | Feb 23, 2018 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.