Patent · US Active

Process control of semiconductor fabrication based on spectra quality metrics

US11300948B2 · kind B2 · utility

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20Claims
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Key dates

Filing dateJun 27, 2019
Grant dateApr 12, 2022
Priority date
Expiry dateFeb 10, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P90/02
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.