Patent · US Active

Method for fabricating a semiconductor device comprising a paste layer and semiconductor device

US11329021B2 · kind B2 · utility

0Cited by

13References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Francisco Javier Santos Rodriguez · Villach, AT
Fabian Craes · Soest, DE
Barbara Eichinger · Villach, AT
Martin Mischitz · Wernberg, AT
Frederik Otto · Recklinghausen, DE
Fabien Thion · Villach, AT

Key dates

Filing date	Nov 15, 2019
Grant date	May 10, 2022
Priority date	—
Expiry date	Dec 10, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13092
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.