Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies
US11329133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.